STMicroelectronics (SCT040W120G3AG) 3rd gen. SiC MOSFET (1200V) Analysis Report

Product Summary and Features

STMicro announced their 3rd generation SiC MOSFET technology at the end of 2021.
The SCT040W120G3AG, released in November 2022, is the first 1200V product using this technology.

・ AEC-Q101 certified for in-vehicle use

・ STMicro’s latest planar MOSFET.

Reports Contents

・ The transistor cell pitch has been shrunk from the second-generation transistor, improving performance by reducing chip size and on-resistance per unit area (RONxA reduced by ~26% from Gen 2).

(1)Structural analysis report:
    ・ Package and die observation
    ・ SiC MOSFET plane analysis: Wiring connection, layout configuration
    ・ SiC MOSFET cross-section analysis: cell array and chip edge termination
    ・ SiC MOSFET SCM analysis 1): channel, JFET, Epi layer, Buffer layer

(2)  Process analysis report:
    ・ Electrical characteristics evaluation
    ・ Correlation between electrical characteristics and device structure: RON analysis, N-epi doping
    ・ Manufacturing process flow estimation and device characteristics analysis
    ・ Comparison with previous generations as technological trends

1) SCM: Scanning Capacitance Microscopy: A method for two-dimensionally visualizing the P/N carriers distribution by scanning the semiconductor surface using a conductive probe.