STMicroelectronics (SCT040H65G3AG) SiC MOSFET(650V) Analysis Report
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Product Summary and Features
STMicro announced their 3rd generation SiC MOSFET technology at the end of 2021.
The SCT040H65G3AG is the first product using this technology.
・ AEC-Q101 certification for in-vehicle use
・ STMicro’s latest planar MOSFET.
Reports Contents
・ The transistor cell pitch has been reduced from the 2nd Gen transistor (used in Tesla-3 motor inverter) to achieve improved performance,(RONxA) is reduced by ~40% from 2nd Gen MOSFETs.
(1)Structural analysis report:
・ Package and die observation
・ SiC MOSFET plane analysis: Wiring connection, layout configuration
・ SiC MOSFET cross-section analysis: cell array and chip edge termination
・ SiC MOSFET SCM analysis 1): channel, JFET, Epi layer
(2) Process analysis report:
・ Electrical characteristics evaluation
・ Correlation between electrical characteristics and device structure: RON analysis, N-epi doping
・ Manufacturing process flow estimation and device characteristics analysis
・ Comparison with previous generations as technological trends
1) SCM: Scanning Capacitance Microscopy: A method for two-dimensionally visualizing the P/N carriers distribution by scanning the semiconductor surface using a conductive probe.
