SiCMOSFET (1700V): ON Semiconductor NTH4L028N170M1 Structure analysis Report

Package	SiC MOSFET	Cell array cross-section SEM image

Report summary

　This product is a “EliteSiC” series 1700V SiC MOSFET manufactured by ON Semiconductor.
We release two reports, one is a structural analysis report including die plane view, die cross-section and SCM(Scanning Capacitance Microscopy) analysis of cell array, and the other is a process flow analysis report including the estimation of the manufacturing process flow and the relationship between the electrical characteristics and structures.
In addition, the report includes a comparison of other companies’ 1700V products.

Product specifications/features

Product number ： NTH4L028N170M1  Vdss=1700V、Id=80 A、Ron=28mΩ　
Product release date: Jan. 2023

• The maximum Vgs range is -15V/25V, making it ideal for high-speed switching applications where the gate voltage can be up to -10V, improving system reliability
• For energy infrastructure and industrial drive applications.

Report contents and results summary

①Structure analysis report (74 pages)

• 　Two-layer metal structure → RONA reduction due to transistor area efficiency.
• 　Epi layer thickness measurement and semi-quantitative evaluation of epi layer concentration were performed based on the SCM analysis results.

②Process analysis report (42 pages)

• ON resistance per transistor area: RonxAA is 610mΩ・mm2
       *Equivalent to the second generation of 1700 products from other companies　
• Confirm the voltage margin by actually measuring the breakdown voltage  (BVdss)
• Relationship between breakdown voltage and epi layer/buffer layer

Please contact us for report pricing.