SiCMOSFET (1200V): onsemi NTH4L022N120M3S Structure Analysis Report
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| Package | SiC MOSFET die | |
Overview
onsemi has released the first new SiC MOSFET product in their M3S family. This transistor is used in their EliteSiC power modules. It features a low on-resistance of 22mΩ, making it ideal for high-speed switching applications. Additionally, it reliably operates with negative gate voltage drive and incorporates new planar structure technology to suppress gate spikes.
Product features
- Product Number：NTH4L022N120M3S Vds=1200V Id=68A
- Release Date: August 2022 (Datasheet)
Report Contents
Two reports on structure and process analysis reveal detailed information about onsemi’s M3S technology. The new M3S process reduces the on-resistance per unit area (measured by RONxA) by 43% and is compatible with the 4th generation advanced SiC MOSFETs. To effectively utilize die area,
a two-layer metal process is employed.
(1) SiC MOSFET Structural Analysis Report (92 Pages)
・SiC MOSFET Planar Analysis: die observation, wiring connections, and layout confirmation.
・SiC MOSFET Cross-Section Analysis: cell array and die edge.
・SiC MOSFET Cross-Section SCM (※ ) + Line Analysis: Focuses on cell sections.
・Structural comparison with the previous-generation onsemi NVHL080N120SC1.
(2) SiC MOSFET Process Analysis Report (41 Pages)
・Estimation and analysis of the manufacturing process flow.
・Evaluation of electrical characteristics and their relationship with device structure, including the
effects of the new planar gate structure.
・N-epi (drift) region doping profile.
・Comparison with previous-generation onsemi NVHL080N120SC1, ROHM, WLFSPD, and Infineon:
RONxA and drain leakage current
Report price
Delivered one week after order placement.
Please contact us for report pricing.
