SiC Power module(1200V) for Automotive: STMicroelectronics M1F45M12W2-1LA Structure Analysis Report

SiC power module	SiC MOSFET die

Report summary

　STMicroelectronics, one of the world’s leading SiC device manufacturers, has released an automotive SiC power module for on-board chargers(OBCs). The benefits of using SiC MOSFETs in OBC systems are higher switching frequency, increased current density, improved efficiency, improved EMI performance, and reduction of system size.  This module balances energy efficiency and high switching frequency, enabling complex topologies with high current density and efficiency. Additionally, the grooved design increases creepage distance and improves safety.

 LTEC released a report focusing on the package structure. This report clarifys the internal package layout, insulating substrate, die attach, and other mounting technologies.

Product specifications and feature

• Product number: M1F45M12W2-1LA / Product release date: Jan. 2023
• Key specifications: VDS = 1200V, ID = 30A, RDS(on) = 47.5mΩ
• This is the first STMicro product for OBC application, and DMT-32 type package.

Report contents （28 pages)

• DBC using AlN dielectric is used to improve heat removal efficiency.
• The installed die is the company’s Gen2 planar type 1200V SiC MOSFET(4 pieces are installed).
• The adhesive strength is improved by making non-flat die mounting surface of DBC board upper electrode.　

Note: Material analysis including resin material is possible as option (EDX,FT-IR, TG, DSC etc,).
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