semiconductor
SiC MOSFET (1200V):INFINEON AIMZH120R060M1T Short-Circuit (SC) Robustness Analysis Report
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| Package | SiC | SCWT result |
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Product： AIMZH120R060M1T Vds=1200V Id=38A |
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Report Background
Infineon developed the MOSFET that adopted CoolSiC Gen.1 technology in 2017. This technology has been improving and improved version of Gen.1 was released in 2023. RonA FOM has been reduced by approximately 40% in new product. *Refer to the analysis report of Infineon_AIMBG120R010M1.
LTEC released new report evaluating the short circuit withstand time (SCWT) and comparing it with the previous generation and other companies’ products.
Reports content and main results (Refer to P.2 for details)
Short-Circuit (SC) Robustness Analysis Report (45 pages)
- Analysis of evaluation data to identify physical mechanisms that limit SC tolerance
- Extraction of critical temperature (Tj, crit) and energy (Esc) to failure.
- Critical temperature at which the gate oxide film begins to deteriorate.
- Comparison of SC tolerance between INFINEON and other companies’ 1200V transistors.
Changes in transistor structure and process. Compare electrical characteristics (off-leakagecurrent and temperature dependence). - Extremely low on-resistance (RonA = 204mΩ×mm2) ⇒ Compact chip can be realized
Importance and use of assessment results
- The necessary minimum response time of the SC protection circuitry.
- From the measured SC drain current waveform and withstand time (tsc,f), the internal temperature of the transistor is estimated using SPICE electrothermal simulation.
Please contact us for report pricing.
* LTEC also released for Structural analysis and process analysis reports of this product.
