SiC MOSFET (1200V): ONSEMI NTH4L040N120M3S Short-Circuit Robustness Analysis Report

Package	SiC	SCWT result

Report Summary

Short circuit withstand endurance time (SCWT) of power devices is an important factor in terms of robustness and reliability. Due to yield and cost issues, it is desirable to reduce the die size of SiC-MOSFETs compared to Si-IGBTs (high Ron), but there is a trade-off relationship between SCWT and ON resistance (Rds(on)), therefore it is important to consider how to ensure the characteristics according to the application.

LTEC released a report on the Short Circuit Withstand capability of Onsemi Elite SiC MOSFET [NTH4L040N120M3S], released in December 2022.

Reports content

OnSemi M3S technology SiC MOSFETs are characterized by extremely high peak (maximum) short-circuit current, which greatly affects the short-circuit withstand capability. The report focuses on the correlation between the measurement results and the physical structure of the transistor and compares it with the equivalent 1200 V SiC-MOSFET manufactured by Wolfspeed and STMicro. This product is used for switching power supply application and we also compare the characteristics of the transistor with OnSemi SC1 technology SiC MOSFET which is used for motor inverters in this report.

Evaluation results

• The necessary minimum response time of the short circuit protection circuitry.
• From the measured short-circuit drain current waveform and withstand time (tsc,f), the internal temperature of the transistor is estimated using SPICE electrothermal simulation.
• M3S technology is comparable with his 3rd -4th  generation SiC devices, but it will likely need to redesign/optimize the JFET area for applications that require longer short-circuit withstand times.

Please contact us for report pricing.

* LTEC also released for Structural analysis and process analysis reports of this porduct.