SiC MOSFET (1200V): Infineon CoolSiC IMZA120R014M1H Structure Analysis Report

		SiC MOSFET　die
Package

Overview

In April 2022, Infineon announced a 1200V SiC MOSFET called M1H as CoolSiC series.

This product benefits from the latest advancements in CoolSiC™ technology, resulting in a significantly expanded gate operating window and improved on-resistance.

Product features

• Model Number: IMZA120R014M1H (marked as 015) Vds =1200V Id=127A Ron=14mΩ
• Product Release Date: April 2022

The MOSFET’s on-resistance is approximately 12% lower than that of the M1 model.

Packaging Improvement:

   Application of “.XT junction” soldering technology reduces solder joint thickness,

    increases thermal conductivity by 15%, and decreases connection thermal resistance by 25%.

Report Contents (71 pages)

• Package observation, die observation, package cross-section analysis, and SEM-EDX analysis.
• SiC MOSFET planar analysis: wiring connections, layout verification, and transistor area.
• SiC MOSFET cross-section analysis: cell array and die edge.
• Comparison with IMZA120R040M1H (Ron=40mΩ).

Report price

    Delivered one week after order placement

    Please contact us for report pricing.