SiC MOSFET (1200V): Diodes Incorporated (Nasdaq: DIOD) DMWS120H100SM4 Structure Analysis Report

Package	SiC MOSFET die	Transistor cell  cross section

Report summary

The number of products adopting SiC MOSFETs in applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC-DC converters and EV battery chargers to improve efficiency and current density has been increasing. Diodes released N-channel SiC MOSFET (DMWS120H100SM4) as a product for the above applications.

 In this report, we analyze the cross-sectional structure of the package, the plane and cross-section of the SiC MOSFET die, and clarify the details of Diodes’ SiC MOSFET.

Product specifications and features

Product ： DMWS120H100SM4         1200V SiC MOSFET　 Id = 37A, Ron = 80mΩ 
Product release date： April 2023

• Reduced switching loss (Gate charge：52nC)
• TO247-4 package
• The structure of the transistor cell is a striped planer type.

Report content (63 pages)

• Package and die observation, Package cross-section analysis
• SiC MOSFET plane analysis： Wiring connection, layout configuration
• SiC MOSFET cross-section analysis： Cell area, die edge

Report price

　Please contact us for current report pricing.