semiconductor

Rohm 4th gen. SiC MOSFET(SCT4062) Analysis Report


Package	Die photo

Product： SCT4062KR 1200V SiC MOSFET (Vdss=1200V, RDS(ON)62mΩ, ID=26A)

Product Summary

　・This product has been released for consumer/industrial applications (motor drives, solar inverters, induction heating, switching power supplies) and is manufactured using the latest 4th generation SiC MOSFET process employing a novel Double Trench technology. *Double trench (gate trench and source/electric field relaxation trench)

・The SCT4062KR achieves industry’s top-class low specific on-resistance (RONxA), with a reduction by approximately 40% compared to conventional products.

Reports Contents

　1.Structure Analysis Report.

・Detailed SiC MOSFET chip structure (cross section and plane (cell part, outer peripheral part)), size, material analysis

・Analysis of SiC MOSFET chip backside electrode

・Comparison with ROHM’s 3rd generation SiC MOSFET

　2. Process flow ・Electrical Characteristic Analysis Report.

・Estimation of SiC MOSFET manufacturing process flow

・Extraction of doping concentration of N-epi layer (drift layer)

・Measurement of on-resistance and breakdown voltage

・Comparison with other companies (Wolfspeed, Infineon, GeneSiC, DENSO)

・Study on reduction of on-resistance per unit area

Note: ROHM 4th generation SiC MOSFETs have the lowest on-resistance per unit area among comparable transistors such as Infineon’s and Wolfspeed 3rd generation SiC MOSFETs.

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