semiconductor
SiC MOSFET(1200V)：Infineon AIMBG120R010M1 Structure Analysis Report
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| Package | SiC MOSFET |
Report summary
In May 2023, Infineon announced a new generation 1200V CoolSiC MOSFET for automotive applications. This automotive-grade SiC MOSFET offers high power density and efficiency, bidirectional charging capability, and reduced system cost for On-Board Charger (OBC) and DC-DC applications.
This time, LTEC released the following two analysis reports. These reports clarify the features of this product.
- Structural analysis report: Package structure, SiC die plane and cross-section analysis.
- Process flow analysis report: Estimation of manufacturing process flow, relationship between electrical properties and structure. Additionally, the technology progress of Infineon CoolSiC 1200V transistors from the first product (2017) to the latest product (2023) is evaluated in this report.
Product specifications/features
Product number ：AIMBG120R010M1 1200V, 205A, 8.7mΩ SiC MOSFET
Product release date: May 2023.
Reports Contents/Overview of Results (Refer to P.2 and P.4 for details)
- Structure analysis Report (69 pages)
- Packaging/mounting technology: Ultra-thin die attach using .XT technology
- Redesigned P shield/Pwell to optimize JFET・Improve transconductance by shortening the channel length (Lch)
- Observation of gate insulating film by TEM
- Process analysis Report (45 pages)
- Specific On-resistance per unit area RONxAA=196mΩ・mm2, 20-40% lower than third-generation competitors; performance achieved without reducing the size of the structural features.
- Channel carrier mobility is 3-4 times higher than that of the competitor’s SiC transistors.
Please contact us for report pricing.
