SiC MOSFET（2000V）：Infineon IMYH200R100M1HXKSA1 Process analysis report
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| Package | SiC MOSFET |
Report summary
In January 2023, Infineon released a 2000V SiC MOSFET. The product is intended for 1500V DC applications, providing increased power density and lower system cost, targeting next generation solar power, electric vehicle (EV) charging, and energy storage systems.
LTEC released two reports regarding this product.
(1) Structural analysis report that analyzes package cross section, Die plane and cross section.
(2) Process flow analysis report that summarizes the estimation of the manufacturing process flow and the relationship between electrical characteristics and structure.
And the report clarifies the features of this product by comparing it with a 1700V product, such as cross-section structure, epitaxial layer thickness, and electrical characteristics.
Product specifications/features
- Product number ： IMYH200R100M1HXKSA1 VDS=2000V, ID=26A, RDS(on) = 100mΩ
- Product release date: Jan 2023.
- Achieved lower drain-source on-resistance compared to the company’s 1700V SiC MOSFET
Reports Contents/Overview of Results (Refer to P.2 and P.4 for details)
(1) Structure analysis report (73 pages)
- Package/mounting technology: Ultra-thin die attach using .XT technology
- Redesigned P shield/Pwell to optimize JFET
- Observation of gate insulating film by TEM.
(2) Process analysis report (40 pages)
- On-resistance RonAA per unit area is 450mΩ・mm².Despite the improved voltage resistance, it is approximately 50% lower than the company’s 1700V product.
- Cell pitch is the same as the company’s 1700V product.
- Using the same basic cell, we conducted an analysis considering measures to reduce RonAA.
Please contact us for report pricing.
