SiC MOSFET(1200V)：BASiC B2M065120Z Structure, Process and Short-Circuit Evaluation Analysis Reports

	Package	SiC MOSFET

Report summary

In May 2023, BASiC Semiconductor, a major SiC device manufacturer in China, announced their second generation SiC MOSFET B2M065120Z product. In 2021, we analyzed the company‘s 1st generation SiC MOSFET (B1M080120HC), and this time the analysis of the 2nd generation device is presented in three reports: (1) a structural analysis report, (2) a manufacturing process flow and electrical properties evaluation report, and (3) a Short-Circuit Robustness evaluation report. The current status of SiC transistor technology in China is clarified.

Product specifications/features

Product number ：B2M065120Z  1200V, 47A , 65mΩ.　 2nd Generation SiC MOSFET
Product release date: May 2023.

Reports Contents/Overview of Results

1. Structure analysis Report (75 pages)

• Changed the transistor cell configuration and reduced the cell pitch by 35%.
• The die thickness has been aggressively reduced to 150μm, which is considered to be an improvement in grinding technology.

2. Process analysis Report (34 pages)

• 40% reduction in per area specific ON resistance (RONxA) FOM .
• Extract N-epi parameters and correlate them with the measured breakdown voltage BVdss.
• Estimate process flow and number of photo/masking steps (critical processes are discussed).

3. Short-circuit evaluation Report (46 pages)

• SCWT (Short-Circuit Withstand Time) evaluated as an indicator of transistor robustness.
• SCWT is equivalent to the 3rd generation 1200V-rated SiC MOSFET of other major manufacturers.
• The gate leakage current during short circuit transient is evaluate as a limiting factor.
• Extract critical short circuit energy (Esc,f) and failure temperature (Tj,crit).
• Extraction of maximum short circuit time for safe turn-off.

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