GaN HEMT(650V): ROHM EcoGaN GNP1070TC-Z Structural Analysis Report
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| Package | GaN HEMT die | ESD protection diode die |
Report summary
In recent years, GaN devices are expected to contribute to energy savings and miniaturization in power supply applications due to their superior high-speed switching characteristics. In April 2023, ROHM began mass production of the 650V GaN HEMT “EcoGaN™ Series”, which is ideal for a wide range of power systems such as servers and AC adapters.
LTEC released structural analysis report on ROHM’s 650V GaN HEMT “GNP1070TC-Z” that includes cross-sectional and plane structural analysis and comparison with other companies’ products.
Note: This product is jointly developed with Ancora Semiconductors Inc., an affiliate company of Delta Electronics.
Product specifications/features
Product number : GNP1070TC-Z 650V GaN HEMT RDS(ON)=70mΩ、Id=20A
Product release date: April 2023
Report Contents/Analysis overview :Structure analysis Report
- Normally-off GaN HEMT
- Gate structure is P-GaN mesa type.
- The wiring configuration of GaN-HEMT is 4Metal
- GaN Epi thickness is 5443nm (including P-GaN/AlGaN)
- Comparison with other companies’ products (STMicroelectronics VIPERGAN50, GaNsystems GS66504B)
Please contact us for report pricing.
