GaN FET(150V): Nexperia GAN7R0-150LBE Structural Analysis Report
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| Package | GeN FET die |
Report summary
GaN devices are expected to contribute to energy savings and miniaturization of various power supply applications due to its low on-resistance and excellent high-speed switching performance. In May 2023, NEXPERIA announced a new normally-off 150V GaN FET featuring ultra-low on-resistance (7mΩ).
LTEC released a structural analysis report clarifying the characteristics of this product by analyzing the package cross section, and GaN FET plane view analysis/cross section analysis including material analysis.
Product specifications/features
Product number : GAN7R0-150LBE 150V GaN FET RDS(ON)=7mΩ
Product release date: May 2023
Analysis Contents/Overview of Results
Structure analysis report (96 pages)
- GaN FET die and PCB substrate are connected with microbumps.
- Gate structure is P-GaN mesa type.
- The wiring configuration of GaN-HEMT is 6Metal
- GaN Epi thickness is 1628nm (including P-GaN)
If you are interested in a process analysis report that evaluates the electrical characteristics of this product and estimates the manufacturing process flow, please feel free to contact LTEC.
Please contact us for report pricing.
