Fuji Electronics IGBT(1200V)_FGW75XS120C Structure analysis Report

Package appearance	Internal layout	Die photograph

Abstract

Fuji Electric has added a new low-loss rated voltage 1200V product to its discrete IGBT (XS series) and begun selling it in March 2021.
LTEC releases a report clarifying the chip structure and features.

Product specifications and features

Product number : FGW75XS120C  Vces = 1200V  Si-IGBT
Product release date : March. 2021

• The die is the 7th generation IGBT.
• By optimizing the die structure and making the Si substrate thinner, Fuji Electric has achieved industry-leading low loss by reducing steady-state loss by approximately 20% and switching loss by approximately 6% compared to existing product.
• Application: Uninterrupted Power Supply(UPS), Power Conditioner(PCS), EV(Electric Vehicle) charger

Analysis contents and results summary

• The transistor cell is a striped trench Gate structure.
• The trench has a Gate connection and an Emitter connection, and has three repeating patterns: Gate(x2) – Emitter.
• Sn, Au, and Ni based solders are used for die attach.
• It is confirmed that there are three peaks in the N-Base layer by SR analysis.

      *SR analysis: Spreading Resistance analysis

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