CoolGaN Half-Bridge IPS Modules: Infineon IGI60F1414A1L Gate driver IC overview Analysis Report
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| Inside the package | Appearance of the high-side gate driver IC chip |
Overview
In order to achieve carbon neutrality and a decarbonization society, it is expected that the loss will be reduced by replacing Si power devices with SiC and GaN. GaN devices are used in small AC adapters, USB chargers, and other consumer products, and the integration of peripheral circuits has resulted in the downsizing of power supplies portion.
The IGI60F1414A1L combines a half-bridge power stage consisting of two 140 mΩ
(typ. RDS(on)) / 600 V enhancement-mode CoolGaN™ switches with dedicated gate drivers.
In this report, we focus on the high-side gate driver IC, and it includes top metal die image, gate layer die images, cross section of logic area and design rule identification.
Product characteristics
- Infineon IGI60F1414A1L (May 2021)
https://www.infineon.com/cms/en/product/power/gan-hemt-gallium-nitride-transistor/igi60f1414a1l/ - Insulated half-bridge IC containing two GaN FETs, high-side and low-side
- GaN FET: VDS(Absolute Maximum Ratings)=600V (normally-off)(E-Mode), maximum ID = 6A
(*) This product is used in Anker small AC adapter.
Contents of analysis report (25 pages)
- Die top metal images and size
(control IC, GaN-FET (high-side, low-side), gate driver IC (high-side, low-side)) - Overview analysis of the high-side gate driver IC
(package x-ray, gate layer die image, cross section of logic area , and design rules)
Report price
Delivery one week after order placement
Please contact us for report pricing.
If you are interested in the circuit analysis or structural analysis of this product, please feel free to contact us.
