1200V SiC MOSFET Short-Circuit Robustness Benchmark Report (2022)
Report summary
The number of vehicles using SiC MOSFETs for their in-vehicle motor inverters is increasing, especially in Chinese vehicles.
One of the major challenges for power devices equipped with inverters is short-circuit resistance, and each SiC makers have been working to improve short-circuit resistance within the constraints of cost (chip size, yield).
In addition to actual short-circuit measurement, LTEC uses transistor structural analysis, physical modeling, and simulations to evaluate transistor short-circuit resistance data and build thermal impedance modeling. Benchmark report (19G-0025-1) was released in 2019. This time, LTEC released the benchmark report on the latest generation devices from the following three companies
1.Rohm 4th gen
2.Toshiba 2nd and 3rd gen
3.GeneSiC 3rd gen
4.Wolfspeed 3rd gen).
Reports contents (73 pages)
Comparison of short-circuit resistance of SiC MOSFETs.
- Each company’s technology trends
- Considerations about the relationship between transistor scaling and oxide film thickness
- Extraction of the maximum short circuit time (tscm) at which the transistor turns off safely under short circuit conditions
This report information is usefull for the following purposes.
Able to estimate the minimum response time of the short-circuit protection circuit
The maximum short circuit time (TSCM) for safe turn-off is bble to use for a constraint for protection circuit design.
Able to use the measured short-circuit drain current waveform and durability time (tsc,f) in SPICE electrical/thermal simulation, then able to estimate the internal temperature and critical breakdown energy (Esc,f) of the transistor.
Please contact us for report pricing.
