GaN HEMT(150V)： Rohm EcoGaN GNE1040TB Structure Analysis Report

Package appearance	GaN die

Report summary

In 2022, ROHM announced its entry into the GaN device market.  As the first step, in March of the same year, ROHM announced that they had developed a 150V GaN HEMT(GNE1040TB) and established a mass production system for it.　One of feature is that the Gate breakdown voltage has been increased to 8 V, compared to 6V which is common for GaN devices with a breakdown voltage of 200V or less. 　

 We performed planar and cross-sectional analysis and released a structure analysis report clarifying its features and details.

Product specifications and feature

• Vdss = 150V, Rds(on) = 40mΩ
• Gate breakdown voltage ： 8V
• DFN package 5.0×6.0×1.0mm
• Application: For power supply circuits (industrial equipment such as base stations and data centers, LiDAR and IoT communication etc.)

Report contents and results summary (90 pages)

• The wiring configuration of the GaN HEMT die is three Metal (including Ohmic Metal Pad).
• The transistor is P-GaN mesa type (double layer structure).
• The channel length is 1560nm.
• GaN-Epi film thickness is 1453nm (including P-GaN).

Please contact us for report pricing.