semiconductor
SiC MOSFET(1200V)：Nexperia NSF080120L3A0 Structure Analysis Report
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| Package | SiC MOSFET |
Report summary
In November 2023, Mitsubishi Electric and Nexperia announced joint development of SiC power semiconductors. Nexperia released their first SiC MOSFET. LTEC released following three reports of this Nexperia device.
(1) Structural analysis report that analyzes the package cross section and transistor structure.
(2) Process analysis report of the manufacturing process, evaluates electrical characteristics, and compares with Mitsubishi Electric’s SiC MOSFET.
(3) Short circuit withstand-robustness evaluation/analysis report.
Product specifications/features
Product number ：NSF080120L3A0 1200V, 35A, 80mΩ SiC MOSFET. Released: December 2023.
Reports Contents/Overview of Results
- Structure analysis Report
- The most advanced thin SiC die (~100um).
- Planar gate structure with narrowed cell pitch.
- Novel peripheral JTE (Junction Termination Extension) with N+ built-in structure.
- Process analysis Report
- Comparison with other companies’ SiC MOSFETs revealed as 3rd generation level RONxA.
- The transistor has smooth Idss-vs-Vds and does not exhibit “humps” or early avalanche currents (below 1200V) caused by crystal defects.
- Structure and characteristic are very similar with Mitsubishi SiC based on our past analysis.
- Short-circuit evaluation Report
- SCWT (Short-Circuit Withstand Time) is equivalent to the 3rd generation 1200V rated SiC MOSFET from major SiC manufacturers.
- Lowest short-circuit peak current density of SiC MOSFET: related to JFET design.
- Extract the maximum short circuit time for safe turn-off.
Please contact us for report pricing.
