semiconductor
GaN HEMT(650V): Cambridge GaN Devices CGD65B200S2 Circuit Analysis Report
Report summary
British start-up Cambridge GaN Devices (CGD) has announced a new 650V GaN HEMT with gate input circuit on a single chip (GaN IC). LTEC released the following three analysis reports: (1) Structural analysis report of the package (Cross section) and die (plane view, cross-section and material). (2) Process analysis report estimated manufacturing process flow including the consideration of device structure and electrical characteristics. and (3) Circuit analysis report of the gate input circuit analysis, which is a novel feature of this product.
Product specifications/features
Product：CGD65B200S2 Vdss=650V, Id=8.5A, Ron=200mΩ. Product release date: Dec. 2022.
- ICeGaN™ (Integrated Circuit Enhancement GaN) gate technology is used.
- It is possible to operate with the same gate driver as Si-Power MOSFET or SJ-MOSFET.
- Since current detection function is equipped, no external detection resistor is required.
Reports contents
- Structure analysis Report (71 pages)
- 5-layer metal wiring is used. This GaN IC consists of Normally -off power GaN-FET, and 2DEG FET (*), metal resistive elements, MIM capacitors enhancement transistors and depletion transistors. Analog circuit and simple digital circuit are integrated.
- The basic structure is AlGaN/GaN-epi-on-Si wafer substrate.
- TEM analysis and EDX analysis are performed.
(*) 2DEG: Two Dimensional Electron Gas
- Process analysis Report (43 pages)
Please see page 4 and 5 - Circuit analysis Report (23 pages)
Please see page 6 and 7
Please contact us for report pricing.
