HestiaPower SiC MOSFET H2M120F080 Structure Analysis Report

Package appearance	SiC MOSFET die (Top Metal)

Report summary

 The SiC market is rapidly growing due to the electrification of automobiles. Hestia Power (Shanghai Hanxin Technology), founded in Shanghai in 2019, is one few companies in China that can mass produce SiC schottky barrier diodes, SiC MOSFETs, and SiC power modules that combine those using automotive-grade SiC for EV applications, and they ship thier SiC products to around the world.
LTEC released a structure analysis report for  SiC MOSFET manufactured by Hestia Power.

Product specifications and feature

• Product number ： H2M120F080 Gen2 SiC MOSFET
• VDS = 1200V, Id=33A, RDSON=80 mΩ 　
• Product release date ： 2022 ～ 2023 (Estimated)
• AEC-Q101
• Application：Switching Mode Power Supply, DC/DC Converters, EV Charging Station, Motor Drives, Power Inverters etc.

Report contents and results summary (See page 2 for table of contents)

Structure analysis report (81 pages)

• Polycide is formed to lower the resistance of the Gate electrode.
• The transistor cell has a novel composite structure with a built-in source resistance. It is estimated that this layout design is intended to enhance short circuit tolerance.
• We also analyzed the annealing marks on the backside of the die.

Please contact us for report pricing.