SiC MOSFET(1200V)：Coherent TM3B0020120A Structure Analysis Report

	Package appearance	SiC MOSFET die

Overview

 Coherent, Inc. in USA (formerly Ⅱ-Ⅵ) is a global SiC wafer manufacturer that competes with Wolfspeed and SiCrystal.  Coherent manufactures and sells discrete SiC MOSFET products under a license from General Electric (GE).  This report is a structure analysis report on the cell structure and the outer peripheral structure of the SiC MOSFET released by Coherent.

Product features

• Product no : TM3B0020120A VDSS=1200V, ID=115A, RDS(ON)=20mΩ
  Product release date:  April 2024　

• 200℃ rated

Report Contents (77 pages)

• GE’s dot-type JTE structure is designed to reduce the area compared to other manufacturers’ technology while relaxing electric field concentration at the cell edge and maximizing the transistor area. (The related patents for the JTE structure are listed in this report.)     JTE: Junction Termination Extension

• Polycide is formed to reduce the resistance of the gate electrode (Poly-Si).
• Based on the cell pitch and RonAA, it is believed that SiC process technology equivalent to third generation or later is being used.

Report price 　　　　　

    Delivered one week after order placement.
　Please contact us for report pricing.

Note: LTEC is also planning to provide a process analysis report and detailed package material  analysis report for this product.
If you are interested, please contact LTEC.