GaN FET built in Half bridge driver (Infineon IGI60F1414A1L) Circuit Analysis Report (Partial)

Hi-side Gate driver IC	Function block (Analysis area)

Product features

 Infineon has already released discrete GaN FET products, but this product, IGI60F1414A1L, is the first product (CoolGaN IPS) that integrates a GaN FET and gate drive circuit in one package.

In this report, we conduct a circuit analysis around the output driver of a high-side gate drive IC, and in addition to the detailed schematic, we clarify features such as the chip’s design philosophy and gate protection operation during drive the GaN FET.

Report summary

• Product information Infineon IGI60F1414A1L (announced in May 2021)
• Isolated half-bridge IC containing two high-side and low-side GaN FETs
• GaN FET: Withstand voltage of 600V and is normally off (E-Mode) with a maximum ID of 6A
• It is used in Anker’s small AC adapter.
• Analysis target IC Die size: 1mmx0.76mm=1.76mm2, No. of metal: 4

Report content (25 pages)

• Die size, Die images (each layer), Circuit analysis (output driver circuit)
• Comments about distinctive functions and ideas
• Deliverables: Report PDF, schematic viewer, EDIF data

Please contact us for report pricing.