GaN HEMT Power Stage IC : ROHM BM3G007MUV-LB (EcoGaN) Gate driver IC Overview Analysis Report

Inside the package	Gate driver chip overview

Overview

In order to achieve carbon neutrality and a decarbonization society, it is expected that the loss will be reduced by replacing Si power devices with SiC and GaN. GaN devices are used in small AC adapters, USB chargers, and other consumer products, and the integration of peripheral circuits has resulted in the downsizing of power supplies portion.

Rohm has already launched a GaN FET products (EcoGaN), but this is the first product to incorporate a single package of GaN FET and gate driver circuits.

In this report, we focus on the gate driver IC, and it includes top metal die image, gate layer die images, cross section of logic area and design rule identification.

Product characteristics

• Rohm BM3G007MUV-LB (July 2023)
  https://www.rohm.com/products/gan-power-devices/gan-hemt-power-stage-ics/bm3g007muv-lb-product
• GaN FET: VDS(Absolute Maximum Ratings)=650V (normally-on)(E-Mode), maximum ID = 20.9 A
• The gate driver circuit has a slew-rate adjustment function

Contents of analysis report (17 pages)

• Chip size and chip overview (GaN-FET, gate driver IC)
• Outline analysis of mounted gate driver IC
      (package x-ray, die overview and size, gate layer die image, cross section of logic area , and design rules)

Report price

    Delivery one week after order placement
    Please contact us for report pricing.

If you are interested in circuit analysis or structural analysis of this product, please feel free to contact us.