GaN FET with Integrated Driver: Texas Instruments LMG3522R030-Q1 Gate driver IC Overview Analysis Report


Inside the package (Bottom View)	Gate driver IC chip overview

Overview

By the electrification of in-vehicle systems, Power devices become key devices and performance is expected to improve with the adoption of SiC and GaN in particular. GaN FETs are also accelerating the adoption of in-vehicle systems.

This is GaN FET that eliminates the need for complicated gate driver circuit matching by integrating the GaN FET and gate driver circuit into a single package. This is the first product that has been integrated into gate driver and is compatible with in-vehicle (AEC-Q100 compliant).

In this report, we focus on the gate driver IC, and it includes top metal die image, gate layer die images, cross section of logic area and design rule identification.

Product characteristics

Texas Instruments LMG3522R030-Q1 (November 2020)
https://www.ti.com/product/LMG3522R030-Q1
The GaN FET built-in driver IC is the first in-vehicle compatible (compliant with AEC-Q100)
(*) Drive inverter solutions using this product are introduced in APEC 2022, and the products are attracting attention.
GaN FET: VDS(Absolute Maximum Ratings)=650V (normally-on), maximum ID = 55A
The gate driver circuit has a slew-rate adjustment function