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SiC MOSFET(1200V)：ON Semiconductor(equipped in Kia EV6 GT) Structure analysis Reports
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| Kia EV6 GT (From web information) | ||
| (https://www.kia.com/uk/new-cars/ev6-gt/#text_441302445) | Power card appearance | SiC MOSFET die |
Report summary
The Kia EV6 GT was announced by Kia Motors, a subordinate of Hyundai Motors, in March 2021, and is high-performance model of the company’s first BEV (battery electric vehicle) Kia.
The inverter that drives the rear motor of EV6(2022model) consists of two units. One inverter is for normal mode using Infineon Si-IGBT module, another inverter is added during high output mode using ON Semiconductor (OnSemi) SiC power cards.
This time, LTEC released two reports (1. Structure analysis report and 2. Process analysis report)
of OnSemi SiC MOSFET power card equipped in this inverter.
Product specifications/features
Product number : NVVR26A120M1WSS 1200V SiC MOSFET Power card
Product release date: 2022
Analysis Contents/Overview of Results
- Structure analysis Report (98 pages)
- A two-layer metal process is used to maximize transistor area.
- Cu ribbon is used for the source wire, and Ag sinter is used for die attach.
- The power module uses a DBC substrate, and the insulation layer is Al, N based.
- Process analysis Report (42 pages)
- The on-resistance per unit area (RONxA 465mΩ・mm²) is equivalent to other companies’ 2nd to 3rd generation SiC process.
- The thickness of the N-epi (drift) layer and doping concentration are extracted and correlated with the measured breakdown voltage BVdss.
- Estimating the manufacturing process flow and the number of photo/masking steps.
Please contact us for report pricing.
