CRRC Gen6 IGBT Power Module (TG950FF08S3-S4A01) Structure Analysis Report
Power module (TG950FF08S3-S4A01) |
Report summary
This product is an automotive 750V 950A Si-IGBT module manufactured by CRRC.
LTEC has released three analysis reports on CRRC’s Si-IGBT(estimated to be the 6th TMOS based on the chip pattern). (1) Structure analysis report for Si-IGBT, (2) Process analysis report for Si-IGBT, and (3) Structure analysis report for Si-FWD.
Note: CRRC / China Railway Construction Investment Group Co., Ltd
Product specifications/features
Product number : TG950FF08S3-S4A01 750V, 950A. 6th Generation Si-IGBT
Product release date: 2022 (estimated)
This module is equipped in Guangzhou Automobile (Emkoo) inverter
Reports price/Overview of Reports
- Si-IGBT(750V) Power module: Structure analysis report
- Power module structure analysis (Teardown, size measurement, Die identification, )
- The RET (Recessed Emitter Trench) structure, which is a characteristics of CRRC, is used in the cell array.
- Confirmed the carrier concentration peak of the wafer by SR analysis.
- Si-FWD: Structure analysis report
- Confirmed the carrier concentration peak of the wafer by SR analysis.
- Si-IGBT(750V) Power module: Process analysis report
- Estimate important process steps such as the RET forming process and the number of mask steps.
- According to the actual measurement results of Ic-Vce characteristics, the Vce_sat of the 6th generation product is improved compared to that of the 5th generation.
Please contact us for report pricing.