Si-IGBT Power module (750V)：CRRC TG820FF08S3-S4A01 Si-IGBT Structure Analysis Report

Power module　(TG820FF08S3-S4A01)

Report summary  　

This product is an automotive 750V 820A Si-IGBT module manufactured by CRRC.

LTEC has released three analysis reports on CRRC’s Si-IGBT(estimated to be the 5th TMOS based on the chip pattern). (1)  Structure analysis report for Si-IGBT, (2) Process analysis report for Si-IGBT, and (3) Structure analysis report for Si-FWD.

                                          Note: CRRC / China Railway Construction Investment Group Co., Ltd

Product specifications/features  　

Product number  : TG820FF08S3-S4A01   750V, 820A. 5th   Generation Si-IGBT

Product release date: 2019 (estimated)

Reports price/Overview of Reports

      1.Si-IGBT(750V) Power module: Structure analysis report

• The RET (Recessed Emitter Trench) structure, which is a characteristics of CRRC, is used in the cell array.　　　
• Confirmed the carrier concentration peak of the wafer by SR analysis.

2. Si-IGBT(750V) Power module: Process analysis report

• Estimate important process steps such as the RET forming process and the number of mask steps.

3. Si-FWD： Structure analysis report

• Confirmed the carrier concentration peak of the wafer by SR analysis.
  

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