semiconductor
Si-IGBT Power module (750V)：CRRC TG820FF08S3-S4A01 Si-IGBT Structure Analysis Report
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| Power module (TG820FF08S3-S4A01) | |
Report summary
This product is an automotive 750V 820A Si-IGBT module manufactured by CRRC.
LTEC has released three analysis reports on CRRC’s Si-IGBT(estimated to be the 5th TMOS based on the chip pattern). (1) Structure analysis report for Si-IGBT, (2) Process analysis report for Si-IGBT, and (3) Structure analysis report for Si-FWD.
Note: CRRC / China Railway Construction Investment Group Co., Ltd
Product specifications/features
Product number : TG820FF08S3-S4A01 750V, 820A. 5th Generation Si-IGBT
Product release date: 2019 (estimated)
Reports price/Overview of Reports
1.Si-IGBT(750V) Power module: Structure analysis report
- The RET (Recessed Emitter Trench) structure, which is a characteristics of CRRC, is used in the cell array.
- Confirmed the carrier concentration peak of the wafer by SR analysis.
- Si-IGBT(750V) Power module: Process analysis report
- Estimate important process steps such as the RET forming process and the number of mask steps.
- Si-FWD： Structure analysis report
- Confirmed the carrier concentration peak of the wafer by SR analysis.
Please contact us for report pricing.
