SiC MOSFET(1200V) ： SEMIQ GP2T040A120H Structure Analysis Report

Package		SiC MOSFET die

Overview

In October 2022, SEMIQ Inc.* released its second-generation 1200V 40mΩ SiC MOSFET. Compared to the existing product (1200V 80mΩ SiC MOSFET), it is expected to have improved on-resistance. Additionally, it is designed to offer the best trade-off between conduction loss and switching loss, aiming to benefit a wide range of applications as much as possible. Applications include solar inverters, uninterruptible power supplies (UPS), and EV charging stations.

*SEMIQ Inc… A developer and manufacturer of silicon carbide (SiC) power semiconductor devices and materials based in the United States (formerly known as Global Power Technologies Group)

Product features

• Model Number：GP2T040A120H VDS=1200V, RDS(on)=37mΩ, ID=63A
• Product Release Date: October 2022
• TO-267-4L package
• Planar gate

Report Contents (68 pages)

• Package, die observation, Planar gate
• SiC MOSFET planar analysis: wiring connections, layout confirmation
• SiC MOSFET cross-section analysis: cell array, die edge, backside electrode, EDX analysis

Report price

    Delivered one week after order placement

    Please contact us for report pricing.