SiC MOSFET(1200V): Toshiba Device & Storage TW060N120C Structural Analysis Report

Package	Die	Cell array cross section

Overview

In July 2022, Toshiba Electronic Devices & Storage Corporation developed its third-generation SiC MOSFETs (TWxxNxxxC series) and began mass production in August of the same year.

These new products offer significant improvements over the second-generation SiC MOSFETs: The new SiC MOSFETs achieve approximately 43% reduction in on-resistance per unit area (RONxA) compared to the second-generation devices.  By reducing the drain-source on-resistance and gate-drain charge, the switching loss is reduced by about 20%.   Nitrogen is injected beneath the P-type diffusion region (P-well) of the SiC MOSFET. This reduces spreading resistance (Rspread) and increases the current flow in the SBD. Nitrogen is also introduced into the JFET region, further reducing the size of the JFET area.

Product features

Model Number：TW060N120C　3rd Generation 1200V SiC MOSFET　Id=36A, Ron=60mΩ　　

Product Release Date： August 2022

Report Contents

Observed that the gate pitch and SBD width have been reduced compared to the second-generation products. From the SCM results, nitrogen injection was confirmed in the JFET region and below Pwell. These results are believed to contribute to performance improvement.

1) Structural Analysis Report (80 pages)

• Package observation, chip observation
• SiC MOSFET planar analysis: wiring connection, layout confirmation
• SiC MOSFET cross-sectional analysis: cell section, chip terminal section
• SiC MOSFET cross-sectional SCM* + line analysis: cell section
• Structural comparison with 3rd generation 650V SiC MOSFET and second generation
  *SCM:Scanning Capacitance Microscopy: a method that visualizes P/N carrier distribution on the semiconductor surface using a conductive probe in a two-dimensional manner.

2) Process Analysis Report (42 pages)

• Evaluation of electrical characteristics and their relationship to device structure
• Estimation of manufacturing process flow and device characteristic analysis
• Comparison with second-generation products from other companies such as Rohm, WLFSPD, and Infineon.

Report price 

    Delivered one week after order placement

    Please contact us for report pricing.