1200V SiC MOSFET Technology Benchmark Report (Yr2022)

Background

Over the past four years, SiC transistors have begun to be used in EVs (electric vehicles), with major manufacturers making technology updates (from ROHM’s 3rd generation process in 2016 to the new 4th generation process in 2021). Since 2018, LTEC has accumulated significant analytical data and information on these products, including Chinese manufacturers (BYD) and Tier 1 automotive system suppliers (such as DENSO). Based on that information, LTEC updates the SiC MOSFET technology survey and releases this 2022 edition SiC MOSFET Technology Survey and Benchmark Report.

Survey results:

・Merger/acquisition to secure supply of SiC wafers

・Started production at 200mm SiC wafers fab (WOLFSPEED)

・ASP (Average Selling Price) reduction due to expanded applications (EV, PV, etc.) and improved yield  (-25 to -40% reduction 2018-2022)

・SiC MOSFET with Trench structure is expanding  (ROHM, Infineon, Denso, Fuji Electric, BYD)

・Steady and constant technological improvement and performance enhancement of SiC MOSFETs.

　 Specific On-resistance (RONxA) is ~220mΩ・mm2 (4th generation, Vdss=1200V), which is about 1/4 of the RONxA for 650V Si Super junction MOSFET (CoolMOS C7)

・Classification of semiconductor manufacturers

          – Top leaders in vertical production integration (Wafer→Device→Module)

          – B-to-B for dedicated applications (e.g. railway, automotive Tier-1)

          – Manufacturer for general commercial/industrial applications

Report contents (see table of contents on next page):

-Benchmarked transistors: TOSHIBA, ROHM (3rd and 4th Gen), Wolfspeed, Onsemi, INFINEON (CoolSiCM1)

Takeaways and Questions addressed in this report:

・A major supplier of SiC wafers and leading SiC transistor manufacturers

・Technological evolution and performance improvement trends of SiC transistors

・Is the price of SiC MOSFET dropping?

・What is the cost/price ratio of SiC and Si based transistors? Has it changed since 2018?

・Short circuit (SC) robustness and endurance time

・Countermeasures against lower manufacturing yields of large-area SiC MOSFETs used in high-current  (Id ~ 200A) power modules.

Note: Please contact us for current report pricing.